2SD1616A_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic-Encapsulated Transistor

Elektronische Bauelemente
2SD1616A
1A , 120V
NPN Plastic-Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 Power dissipation
CLASSIFICATION OF h_{FE (1)}
Product-Rank 2SD1616A-L 2SD1616A-K 2SD1616A-U
Range
135~270
200~400
300~600
TO-92
A
D
B
E
CF
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
G
H
Emitter
Collector
Base
J
Collector


Base

Emitter
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
120
60
6
1
750
150, -55~150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
Collector to Emitter Saturation Voltage*
Base to Emitter Saturation Voltage*
Base to Emitter Voltage*
Transition Frequency
Collector Output Capacitance
Turn on time
Storage time
Fall time
*pulse test: PW≦350μs, σ≦2%.
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_{FE (1)}
h_{FE (2)}
V_CE(sat)
V_BE(sat)
V_BE
f_T
C_ob
t_on
t_S
t_F
Min.
120
60
6
-
-
135
81
-
-
0.6
100
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
0.07
0.95
0.07
Max.
-
-
-
0.1
0.1
600
-
0.3
1.2
0.7
-
19
-
-
-
Unit
V
V
V
μA
μA
V
V
V
MHz
pF
Test Condition
I_C=10μA, I_E=0
I_C=2mA, I_B=0
I_E=10μA, I_C=0
V_CB=60V, I_E=0
V_EB=6V, I_C=0
V_CE=2V, I_C=100mA
V_CE=2V, I_C=1A
I_C=1A, I_B=50mA
I_C=1A, I_B=50mA
V_CE=2V, I_C=50mA
V_CE=2V, I_C=100mA
V_CB=10V, I_E=0, f=1MHz
μs
V_CC=10V, I_C=100mA,
I_B1=-I_B2=10mA
http://www.SeCoSGmbH.com/
12-Apr-2011 Rev. A
Any changes of specification will not be informed individually.
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