2SD1468_15 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic-Encapsulated Transistor

Elektronische Bauelemente
2SD1468
1A , 30V
NPN Plastic-Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low Saturation Voltage
Ideal for Low Voltage, High Current Dribes
High DC Current Gain and High Current
CLASSIFICATION OF h_FE
Product-Rank 2SD1468-Q 2SD1468-R
Range
120~270
180~390
2SD1468-S
270~560
TO-92
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
1 Emitter
2 Collector
3 Base
Collector
2
3
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
30
15
5
1
625
150, -55~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Condition
Collector to Base Breakdown Voltage
V(BR)CBO
30
-
-
V IC=50µA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
15
-
-
V IC=1mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
5
-
-
V IE=50µA, IC=0
Collector Cut – Off Current
ICBO
-
-
0.5
µA VCB=20V, IE=0
Emitter Cut – Off Current
IEBO
-
-
0.5
µA VEB=4V, IC=0
DC Current Gain
hFE
120
-
560
VCE=3V, IC=100mA
Collector to Emitter Saturation Voltage
VCE(sat)
-
-
0.4
V IC=500mA, IB=50mA
Transition Frequency
fT
50
-
-
MHz VCE=5V, IC=50mA, f=100MHz
Collector Output Capacitance
Cob
-
-
30
pF VCB=10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
26-Mar-2012 Rev. A
Any changes of specification will not be informed individually.
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