2SC5706 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTOR(5A,50V,15W)

Elektronische Bauelemente
2SC5706 D
NPN Silicon
General Purpose Transistor
FEATURES
Large current capacitance
RoHS Compliant Product
6. 50Ć0. 15
5. 30Ć0. 10
C
TO-252
0. 51Ć0. 05
2. 30Ć0. 10
Low collector-to-emitter saturation voltage
High-speed switching
5
0. 51Ć0. 10 ^{1. 20}
High allowable power dissipation
0Ć0. 10
5
5
MARKING : 5706
(With Date Code)
MAXIMUM RATINGS* T_{A=25ćunless otherwise noted}
0. 80Ć0. 10
2. 30Ć0. 10
BC
0. 60Ć0. 10
2. 30Ć0. 10
E
0 Ć9
0. 51
Parameter
Symbol
Ratings
Unit
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCES
80
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
ICBO
5
A
Collector Current (Pulse)
ICP
7.5
A
Base Current
IB
1.2
A
Junction Temperature
Tj
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Total Power Dissipation
PD
0.8
PD(TC=25°C)
15
W
W
ELECTRICAL CHARACTERISTICS (Tamb=25^OCunless otherwise specified)
Parameter
Symbol Min Typ. Max Unit. Test Conditions
Collector-Base Breakdown Voltage
BVCBO
80
-
-
V
IC=10µA, IE=0
Collector-Emitter Breakdown Voltage
BVCES
80
-
-
V
IC=100µA, RBE=0
Collector-Emitter Breakdown Voltage
BVCEO
50
-
-
V
IC=1mA, RBE=
Emitter-Base Breakdown Voltage
BVEBO
6
-
-
V
IE=10µA, IC=0
Collector-Base Cutoff Current
ICBO
-
-
1
µA VCB=40V, IE=0
Emitter-Base Cutoff Current
IEBO
-
-
1
µA VEB=4V, IC=0
Collector Saturation Voltage 1
*VCE(sat)1
-
-
135 mV IC=1A, IB=50mA
Collector Saturation Voltage 2
*VCE(sat)2
-
-
240 mV IC=2A, IB=100mA
Base Saturation Voltage
*V BE(sat)
-
-
1.2
V
IC=2A, IB=100mA
DC Current Gain
*hFE
200
-
560
VCE=2V, IC=500mA
Gain-Bandwidth Product
fT
-
400
-
MHz VCE=10V, IC=500mA
Output Capacitance
Cob
-
15
-
pF VCB=10V, f=1MHz
Turn-On Time
ton
-
35
-
ns See specified test circuit.
Storage Time
tstg
-
300
-
ns See specified test circuit.
Fall Time
tf
-
20
-
ns See specified test circuit.
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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