2SC5658 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Encapsulated Transistor

Elektronische Bauelemente
2SC5658
0.15A , 60V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
Low current (max. 150 mA)
Low voltage (max. 50 V).
SOT-723
CLASSIFICATION OF h_{FE (1)}
Product-Rank 2SC2658-Q 2SC2658-R
Range
120~270
180~390
Marking
BQ
BR
2SC2658-S
270~560
BS
Collector
3
1
Base
2
Emitter
REF.
A
B
C
D
E
Millimeter
Min. Max.
1.150
0.750
-
1.250
0.850
0.500
1.150 1.250
0.800TYP.
REF.
F
G
H
I
Millimeter
Min. Max.
0.170 0.270
0.270 0.370
0 0.050
-
0.150
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
60
50
7
150
100
150, -55 ~ 150
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test condition
Collector to Base Breakdown Voltage
V(BR)CBO
60
-
-
V IC=50µA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
50
-
-
V IC=1mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
7
-
-
V IE=50µA, IC=0
Collector Cut-Off Current
ICBO
-
-
0.1
µA VCB=60V, IE=0
Emitter Cut-Off Current
IEBO
-
-
0.1
µA VEB=7V, IC=0
DC Current Gain
hFE
120
-
560
VCE=6V, IC=1mA
Collector to Emitter Saturation Voltage VCE(sat)
-
-
0.4
V IC=50mA, IB=5mA
Transition Frequency
fT
-
180
-
MHz VCE=12V, IC=2mA, f=100MHz
Collector Output Capacitance
Cob
-
-
3.5
pF VCB=12V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
19-Sep-2012 Rev.A
Any changes of specification will not be informed individually.
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