2SC5585_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Silicon General Purpose Transistor

Elektronische Bauelemente
2SC5585
0.5A , 15V
NPN Silicon General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
High Current.
Low V_CE(sat). V_CE(sat)≦0.25V (@I_C=200mA / I_B=10mA)
Complement of 2SC4738.
Application
General Purpose Amplification.
MARKING
BX
PACKAGE INFORMATION
Package
MPQ
SOT-523
3K
LeaderSize
7’ inch
SOT-523
A
M
3
Top View
CB
1
2
K
L
E
3
1
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.5
1.7
1.45 1.75
0.75 0.85
0.7
0.9
0.9
1.1
0.15 0.25
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
-
0.1
0.55 REF.
0.1
0.2
-
0.5 TYP.
0.25 0.325
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent
Collector Power Dissipation
Junction & Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
15
12
6
500
150
150, -55 ~ 150
Unit
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ. Max. Unit
Collector-base breakdown voltage
V(BR)CBO
15
Collector-emitter breakdown voltage
V(BR)CEO
12
Emitter-base breakdown voltage
V(BR)EBO
6
Collector cut-off current
ICBO
-
Emitter cut-off current
IEBO
-
DC current gain
hFE
270
Collector-emitter saturation voltage *
VCE(sat)
-
Transition frequency
fT
-
Collector output capacitance
Cob
-
-
-
V
-
-
V
-
-
V
-
0.1
μA
-
0.1
μA
-
680
-
0.25
V
320
-
MHz
7.5
-
pF
Test Conditions
IC=10μA, IE=0
IC=1mA, IB=0
IE=10μA, IC=0
VCB=15V, IE=0
VEB=6V, IC=0
VCE=2V, IC=10mA
IC=200mA, IB=10mA
VCE=2V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
24-Feb-2011 Rev. B
Any changes of specification will not be informed individually.
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