2SC5585 Datasheet, PDF (1/2 Pages) Rohm – Low frequency transistor (12V, 0.5A)

Elektronische Bauelemente
2SC5585
NPN Silicon
General Purpose Transistor
RoHS Compliant Product
FEATURES
High Current
Low VCE(sat) - VCE(sat)Ä°250mV at IC = 200mA/IB=10mA
MARKING CODE
BX
A
L
3
S
Top View
B
2
1
3. Collector
2. Base
1. Emitter
G
H
D
C
J
K
SOT-523
Dim Min Max
A
1.50 1.70
B
0.78 _0.82
C
0.80 0.82
D
0.28 0.32
G 0.90 1.10
H
0.00 0.10
J
0.10 0.20
K
0.35 0.41
L
0.49 0.51
S
1.50 1.70
All Dimension in mm
Maximum Ratings (Ta=25 ^o C unless otherwise specified)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (continuous)
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Value
Unit
VCBO
15
V
VCEO
12
V
VEBO
6
V
IC
0.5
A
PC
0.15
W
Tj
-55~+150
o_C
Tstg
-55~+150
o_C
Electrical Characteristics (Tamb=25 ^o C unless otherwise specified)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO 15
Collector-emitter breakdown voltage BVCEO 12
Emitter-base breakdown voltage
BVEBO
6
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
DC current gain
hFE
270
Collector-emitter saturation voltage VCE(sat)
Transition frequency
fT
Collector Output capacitance
Cob
Typ.
320
7.5
Max.
0.1
0.1
680
0.25
Unit
V
V
V
μA
μA
V
MHz
pF
Conditions
IC=10 μA, IE=0
IC=1mA, IB=0
IE=10 μA, IC=0
VCB=15V, IE=0
VEB= 6V, IC=0
VCE=2V, IC=10mA
IC=200mA, IB=10mA
VCE=2V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1MHz
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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