2SC5345 Datasheet, PDF (1/2 Pages) AUK corp – NPN Silicon Transistor (RF amplifier)

Elektronische Bauelemente
2SC5345
0.02A , 30V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
RF amplifier
High current transition frequency f_T=550MHz(Typ.),
[V_CE=6V, I_E=-1mA]
Low output capacitance : Cob=1.4pF(Typ.) [V_CB=6V, I_E=0]
Low base time constant and high gain
Excellent noise response
SOT-23
A
L
3
Top View C B
1
1
2
K
E
3
2
MARKING :
5345
CLASSIFICATION OF h_FE
Product-Rank 2SC5345-R
Range
40~80
2SC5345-O
70~140
2SC5345-Y
120~240
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7 inch
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
30
20
4
20
300
150, -55~150
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
V(BR)CBO
30
-
-
V IC=10µA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
20
-
-
V IC=5mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
4
-
-
V IE=10µA, IC=0
Collector Cut-Off Current
ICBO
-
-
0.5
µA VCB=30V, IE=0
Emitter Cut-Off Current
IEBO
-
-
0.5
µA VEB=4V, IC=0
DC Current Gain
hFE
40
-
240
VCE=6V, IC=1mA
Collector to Emitter Saturation Voltage VCE(sat)
-
-
0.3
V IC=10mA, IB=1mA
Transition Frequency
fT
-
550
-
MHz VCE=6V, IC=1mA
Collector output capacitance
Cob
-
1.4
-
pF VCB=6V, IE=0, f=1MHZ
http://www.SeCoSGmbH.com/
15-Jul-2011 Rev. A
Any changes of specification will not be informed individually.
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