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2SC5343_15 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
2SC5343
0.15A , 60V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
Excellent hFE Linearity
Low Noise
CLASSIFICATION OF hFE
Product-Rank 2SC5343-O
Range
70~140
2SC5343-Y
120~240
2SC5343-G
200~400
2SC5343-L
300~700
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7 inch
SOT-23
A
L
3
Top View C B
1
1
2
K
E
3
2
F
REF.
A
B
C
D
E
F
D
G
H
J
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Base Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
IB
PC
TJ, TSTG
60
50
5
150
50
200
150, -55~150
Unit
V
V
V
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
V(BR)CBO
60
-
-
V IC=100µA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
50
-
-
V IC=10mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
5
-
-
V IE=10µA, IC=0
Collector Cut-Off Current
ICBO
-
-
0.1
µA VCB=60V, IE=0
Emitter Cut-Off Current
IEBO
-
-
0.1
µA VEB=5V, IC=0
DC Current Gain
hFE
70
-
700
VCE=6V, IC=2mA
Collector to Emitter Saturation Voltage VCE(sat)
-
0.1 0.25
V IC=100mA, IB=10mA
Transition Frequency
fT
80
-
-
MHz VCE=10V, IC=1mA
Collector output capacitance
Cob
-
-
3.5
pF VCB=10V, IE=0, f=1MHz
Noise Figure
NF
-
-
10
dB VCE=6V, IC=0.1mA,
f=1KHz, Rg=10KΩ
http://www.SeCoSGmbH.com/
24-Dec-2012 Rev. A
Any changes of specification will not be informed individually.
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