2SC4738 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

Elektronische Bauelemente
2SC4738
0.15A , 60V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High Voltage and High Current
High DC Current Gain
Complementary to 2SA1832
CLASSIFICATION OF h_FE
Product-Rank 2SC4738-Y 2SC4738-GR 2SC4738-BL
Range
120~240
200~400
350~700
Marking
LY
LG
LL
PACKAGE INFORMATION
Package
MPQ
SOT-523
3K
Leader Size
7 inch
SOT-523
A
M
3
Top View
CB
1
2
K
L
E
3
1
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.5
1.7
1.45 1.75
0.75 0.85
0.7
0.9
0.9
1.1
0.15 0.25
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
-
0.1
0.55 REF.
0.1
0.2
-
0.5 TYP.
0.25 0.325
Collector
3
1
Base
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise noted)
Parameter
Symbol
Ratings
Collector to Base Voltage
VCBO
60
Collector to Emitter Voltage
VCEO
50
Emitter to Base Voltage
VEBO
5
Collector Current - Continuous
IC
150
Collector Power Dissipation
PC
100
Thermal Resistance Junction to Ambient
RθJA
1250
Junction and Storage Temperature
TJ, TSTG
150, -55~150
2
Emitter
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
Parameter
Symbol Min.
Typ. Max.
Collector to Base Breakdown Voltage
V(BR)CBO
60
-
-
Collector to Emitter Breakdown Voltage V(BR)CEO
50
-
-
Emitter to Base Breakdown Voltage
V(BR)EBO
5
-
-
Collector Cut - off Current
ICBO
-
-
100
Emitter Cut - off Current
IEBO
-
-
100
DC Current Gain
hFE
120
-
700
Collector to Emitter Saturation Voltage
VCE(sat)
-
-
0.25
Transition Frequency
fT
80
-
-
Collector Output Capacitance
Cob
-
-
3.5
Unit
V
V
V
nA
nA
V
MHz
pF
Test Conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=100µA, IC=0
VCB=60V, IE=0
VEB=5V, IC=0
VCE=6V, IC=2mA
IC=100mA, IB=10mA
VCE=10V, IC=1mA
VCB=10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
23-Feb-2012 Rev. A
Any changes of specification will not be informed individually.
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