2SC4672_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

Elektronische Bauelemente
2SC4672
500 mW, 60 V
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 Excellent DC current gain characteristics.
 Complements the 2SA1797
CLASSIFICATION OF h_FE
Rank
2SC4672-P
Range
82~180
Marking
DKP
2SC4672-Q
120~270
DKQ
2SC4672-R
180~390
DKR
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
Leader Size
7 inch

Base
Collector


Emitter
SOT-89
4
123
A
E
C
B
F
G
H
J
D
K
L
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.40 4.60
3.94 4.25
1.40 1.60
2.25 2.60
1.50 1.85
0.89 1.20
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.40 0.58
1.50 TYP
3.00 TYP
0.32 0.52
0.35 0.44
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATING
Collector to Base Voltage
V_CBO
60
Collector to Emitter Voltage
V_CEO
50
Emitter to Base Voltage
V_EBO
6
Continuous Collector Current
I_C
2
Collector Power Dissipation
P_C
500
Thermal Resistance From Junction To Ambient
R_θJA
250
Junction, Storage Temperature
T_J, T_STG
150, -55~150
UNIT
V
V
V
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN TYP MAX UNIT
TEST CONDITION
Collector to Base Breakdown Voltage
V_(BR)CBO
60
-
-
V I_C=50μA, I_E = 0
Collector to Emitter Breakdown Voltage V_(BR)CEO
50
-
-
V I_C=1mA, I_B = 0
Emitter to Base Breakdown Voltage
V_(BR)EBO
6
-
-
V I_E=50μA, I_C = 0
Collector Cut-Off Current
I_CBO
-
-
0.1
μA V_CB=60 V, I_E = 0
Emitter Cut-Off Current
I_EBO
-
0.1
μA V_EB=5 V, I_C = 0
DC Current Gain
h_FE
82
Collector to Emitter Saturation Voltage
V_CE(sat)
-
-
390
V_CE=2V, I_C=0.5A
-
0.35
V I_C=1A, I_B=50mA
Transition Frequency
f_T
-
210
-
MHz V_CE =2V, I_C =0.5A, f = 100 MHz
Collector Output Capacitance
C_ob
-
25
-
pF V_CB = 10V, I_E = 0 , f=1MHz
http://www.SeCoSGmbH.com/
10-Dec-2013 Rev. C
Any changes of specification will not be informed individually.
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