2SC4672_10 Datasheet, PDF (1/2 Pages) Unisonic Technologies – LOW FREQUENCY TRANSISTOR

Elektronische Bauelemente
2SC4672
500 mW, 60 V
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-89
FEATURES
 Low saturation voltage, typically V_CE(SAT)=0.1V at I_C/I_B=1A/50mA.
 Excellent DC current gain characteristics.
 Complements the 2SA1797
4
123
A
E
C

Base
Collector


Emitter
B
F
G
H
J
D
K
L
REF.
A
B
C
D
E
F
Millimeter
Min.
4.40
3.94
1.40
Max.
4.60
4.25
1.60
2.30 2.60
1.50 1.70
0.89 1.20
REF.
G
H
J
K
L
Millimeter
Min.
0.40
1.50
3.00
Max.
0.58
TYP
TYP
0.32 0.52
0.35 0.44
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATING
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Continuous Collector Current
Collector Power Dissipation
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
60
50
6
2
500
150, -55~150
UNIT
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN TYP MAX UNIT
TEST CONDITION
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
f_T
C_ob
60
-
-
V I_C=50μA, I_E = 0
50
-
-
V I_C=1mA, I_B = 0
6
-
-
V I_E=50μA, I_C = 0
-
-
0.1
μA V_CB=60 V, I_E = 0
-
0.1
μA V_EB=5 V, I_C = 0
82
-
270
V_CE=2V, I_C=0.5A
-
-
0.35
V I_C=1A, I_B=50mA
-
210
-
MHz V_CE = 2V, I_C = 500mA, f = 100 MHz
-
25
-
pF V_CB = 10V, I_E = 0 , f=1MHz
CLASSIFICATION OF h_FE
Rank
Range
Marking
http://www.SeCoSGmbH.com/
09-Mar-2010 Rev. B
P
82~180
DKP
Q
120~270
DKQ
Any changes of specification will not be informed individually.
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