2SC4618 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN General Purpose Transistor

Elektronische Bauelemente
2SC4618
NPN General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
z Low collector capacitance
z Low rbb, high gain, and excellent noise characteristics
Collector
3
SOT-523
A
L
3
Top View
CB
1
1
2
K
E
3
2
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified)
PARAMETER
SYMBOL
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
Pc
T_J, T_STG
F
REF.
A
B
C
D
E
F
D
G
H
Millimeter
Min. Max.
1.50 1.70
1.45 1.75
0.75 0.85
0.70 0.90
0.90 1.10
0.25 0.33
REF.
G
H
J
K
L
J
Millimeter
Min. Max.
0.00 0.15
0.28 0.40
0.10 0.20
-
-
0.75 0.85
RATINGS
40
25
5
50
0.15
+150, -55 ~ +150
UNIT
V
V
V
mA
W
℃
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)
PARAMETER
TEST CONDITIONS SYMBOL
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
I_C = 50 µA, I_E = 0
I_C = 1mA, I_B = 0
I_E = 50 µA, I_C = 0
V_CB = 24 V, I_E = 0
V_EB = 3 V, I_C = 0
I_C = 10mA, I_B = 1 mA
V_CE = 6V, I_C = 1 mA
V_CE = 6V, I_E = 1 mA, f = 100 MHz
V_CE = 6V, I_E = 0 A, f = MHz
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
V_CE(sat)
h_FE
f_T
C_OB
MIN.
40
25
5
-
-
-
56
150
-
TYP.
-
-
-
-
-
-
-
-
MAX.
-
-
-
0.5
0.5
0.3
270
-
2.2
UNIT
V
V
V
μA
μA
V
MHz
pF
CLASSIFICATION OF h_FE
Rank
Range
Marking
N
56 – 120
AN
P
82 – 180
AP
Q
120 – 270
AQ
http://www.SeCoSGmbH.com/
01-December-2008 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 2