2SC4617_11 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Silicon General Purpose Transistor

Elektronische Bauelemente
2SC4617
0.15A , 60V
NPN Silicon General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
Low C_ob. C_ob=2.0pF
Complement of 2SA1774
CLASSIFICATION OF h_FE
Product-Rank 2SC4617-Q
Range
120~270
Marking
BQ
2SC4617-R
180~390
BR
2SC4617-S
270~560
BS
PACKAGE INFORMATION
Package
MPQ
SOT-523
3K
LeaderSize
7’ inch
SOT-523
A
M
3
Top View
CB
1
2
K
L
E
3
1
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.5
1.7
1.45 1.75
0.75 0.85
0.7
0.9
0.9
1.1
0.15 0.25
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
-
0.1
0.55 REF.
0.1
0.2
-
0.5 TYP.
0.25 0.325
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent
Collector Power Dissipation
Junction & Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
60
50
7
150
150
150, -55 ~ 150
Unit
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ. Max. Unit
Collector-base breakdown voltage
V(BR)CBO
60
Collector-emitter breakdown voltage
V(BR)CEO
50
Emitter-base breakdown voltage
V(BR)EBO
7
Collector cut-off current
ICBO
-
Emitter cut-off current
IEBO
-
Collector-emitter saturation voltage *
VCE(sat)
-
DC current gain
hFE
120
Transition frequency
fT
-
Collector output capacitance
Cob
-
-
-
V
-
-
V
-
-
V
-
0.1
μA
-
0.1
μA
-
0.4
V
-
560
180
-
MHz
-
3.5
pF
* Pulse Test :Pulse Width ≤300us,D.C ≤ 2%
Test Conditions
IC=50μA, IE=0
IC=1mA, IB=0
IE=50μA, IC=0
VCB=60V, IE=0
VEB= 7V, IC=0
IC=50mA, IB=5mA
VCE=6V, IC=1mA
VCE=12V, IE=2mA, f=100MHz
VCB=12V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
24-Feb-2011 Rev. D
Any changes of specification will not be informed individually.
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