2SC4548_15 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Encapsulated Transistor

Elektronische Bauelemente
2SC4548
0.2A , 400V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Small Flat Package
High Breakdown Voltage
Excellent h_FE Linearity
SOT-89
4
A
1
B
2
C
3
E
E
C
CLASSIFICATION OF h_FE
Product-Rank 2SC4548-D
2SC4548-E
Range
60~120
100~200
Marking
CN
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
Leader Size
7 inch
B
D
F
G
H
J
K
L
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.40 4.60
3.94 4.25
1.40 1.60
2.25 2.60
1.50 1.85
0.89 1.20
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.40 0.58
1.50 TYP
3.00 TYP
0.32 0.52
0.35 0.44
Collector
2
1
Base
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector-Base Voltage
VCBO
400
Collector-Emitter Voltage
VCEO
400
Emitter-Base Voltage
VEBO
5
Collector Current-Continuous
IC
200
Collector Power Dissipation
PC
500
Maximum Junction to Ambient
RθJA
250
Junction & Storage Temperature
TJ, TSTG
150, -55~150
3
Emitter
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test conditions
Collector-Base Breakdown Voltage
V(BR)CBO
400
-
-
V IC=10µA, IE=0
Collector-Emitter Breakdown Voltage
V(BR)CEO
400
-
-
V IC=1mA, IB=0
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
V(BR)EBO
5
ICBO
-
IEBO
--
-
-
V IE=10µA, IC=0
-
0.1
µA VCB=300V, IE=0
-
0.1
µA VEB=4V, IC=0
DC Current Gain
hFE
60
-
200
VCE=10V, IC= 50mA
Collector-Emitter Saturation voltage
VCE(sat)
-
-
0.6
V IC=50mA, IB= 5mA
Base-Emitter Saturation Voltage
VBE(sat)
-
-
1
V IC=50mA, IB= 5mA
Transition Frequency
fT
-
70
-
MHz VCE=30V, IC=10mA
Collector Output Capacitance
COB
-
4
-
pF VCB=30V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
04-Nov-2011 Rev. A
Any changes of specification will not be informed individually.
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