2SC4375 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic-Encapsulate Transistor

Elektronische Bauelemente
2SC4375
1.5 A , 30 V
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 Small Flat Package.
 Low Collector-Emitter Saturation Voltage.
CLASSIFICATION OF h_FE
Product-Rank
2SC4375-O
Range
100~200
Marking
GO
2SC4375-Y
160~320
GY
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
LeaderSize
7’ inch
SOT-89
A
E
B
F
G
H
J
4
123
C
D
K
L
REF.
A
B
C
D
E
F
Millimeter
Min.
4.40
3.94
1.40
Max.
4.60
4.25
1.60
2.30 2.60
1.50 1.70
0.89 1.20
REF.
G
H
J
K
L
Millimeter
Min.
0.40
1.50
3.00
Max.
0.58
TYP
TYP
0.32 0.52
0.35 0.44
Collector


Base
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Continuous Collector Current
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_J, T_STG
30
30
5
1.5
500
250
150, -55~150

Emitter
Unit
V
V
V
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test condition
Collector to Base Breakdown Voltage
V_(BR)CBO
30
-
-
V I_C=1mA, I_E=0
Collector to Emitter Breakdown Voltage V_(BR)CEO
30
-
-
V I_C=10mA, I_B=0
Emitter to Base Breakdown Voltage
V_(BR)EBO
5
-
-
V I_E=1mA, I_C=0
Collector Cut-Off Current
I_CBO
-
-
0.1
μA V_CB=30 V, I_E=0
Emitter Cut-Off Current
I_EBO
-
-
0.1
μA V_EB=5V, I_C=0
DC Current Gain
h_FE
100
-
320
V_CE=2V, I_C=500mA
Collector to Emitter Saturation Voltage
V_CE(sat)
-
-
2
V I_C=1.5A, I_B=30mA
Base to emitter Voltage
V_BE
-
-
1
V V_CE=2V, I_C=500mA
Transition Frequency
f_T
-
120
-
MHz V_CE=2V, I_C=500mA
Collector Output Capacitance
C_ob
-
-
40
pF V_CB =10V, I_E=0 , f=1MHz
http://www.SeCoSGmbH.com/
14-Jan-2010 Rev. A
Any changes of specification will not be informed individually.
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