2SC4373 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic-Encapsulate Transistor

Elektronische Bauelemente
2SC4373
0.8 A , 120 V
NPN Plastic-Encapsulate Transistor
FEATURES
Small Flat Package.
Large Current Capacity.
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
CLASSIFICATION OF h_FE
Product-Rank
2SC4373-O
Range
80~160
Marking
CO
2SC4373-Y
120~240
CY
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
Leader Size
7 inch
SOT-89
A
E
B
F
G
H
J
4
123
C
D
K
L
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.40 4.60
3.94 4.25
1.40 1.60
2.30 2.60
1.50 1.70
0.89 1.20
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.40 0.58
1.50 TYP
3.00 TYP
0.32 0.52
0.35 0.44
Collector
2
1
Base
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Continuous Collector Current
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
120
120
5
800
500
250
150, -55~150
3
Emitter
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test condition
Collector to Base Breakdown Voltage
V(BR)CBO
120
-
-
V IC=1mA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
120
-
-
V IC=10mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
5
-
-
V IE=1mA, IC=0
Collector Cut-Off Current
ICBO
-
-
0.1
µA VCB=120 V, IE=0
Emitter Cut-Off Current
IEBO
-
-
0.1
µA VEB=5V, IC=0
DC Current Gain
hFE
80
-
240
VCE=5V, IC=100mA
Collector to Emitter Saturation Voltage VCE(sat)
-
-
1
V IC=500mA, IB=50mA
Base to emitter Voltage
VBE
-
-
1
V VCE=5V, IC=500mA
Transition Frequency
fT
-
120
-
MHz VCE=5V, IC=500mA
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09-Jun-2011 Rev. A
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