2SC4226_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Silicon Epitaxial Planar Transistor

Elektronische Bauelemente
1N5400G ~ 1N5408G
Voltage 50V ~ 1000 V
3.0 Amp Glass Passivated Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 Low forward voltage drop
 High current capability
 High reliability
 High surge current capability
 Glass passivated junction
DO-27
C
A
MECHANICAL DATA
 Case: Molded plastic
 Epoxy: UL 94V-0 rate flame retardant
 Lead: Axial leads, solderable per MIL-STD-202,
method 208 guaranteed
 Polarity: Color band denotes cathode end
 Mounting position: Any
 Weight: 1.10 grams (approximately)
B
D
A
REF.
A
B
C
D
Millimeter
Min. Max.
25.4 (TYP)
7.20 9.53
5.00 5.60
1.20 1.32
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Parameter
Symbol
1N
5400G
1N
5401G
Rating
1N
1N
5402G 5404G
1N
5406G
1N
5407G
Maximum Recurrent Reverse Voltage
V_RRM
50
100 200 400 600 800
Maximum RMS Voltage
V_RMS
35
70
140 280 420 560
Maximum DC Blocking Voltage
V_DC
50
100 200 400 600 800
Maximum Instantaneous Forward
Voltage@ I_F = 3A
V_F
1.1
Maximum Average Forward Rectified
Current, 0.375” (9.5mm) lead length@
I_O
3.0
T_A = 75°C
Peak Forward Surge Current, 8.3ms
single half sine-wave superimposed on
I_FSM
150
rated load (JEDEC method)
Maximum DC Reverse
T_A=25°C
5
Current at Rated DC
I_R
Blocking Voltage
T_A=100°C
50
Typical Thermal Resistance
Junction-Ambient ²
R_θJA
30
Typical Junction Capacitance ¹
C_J
40
Operating and Storage Temperature
Range
T_J, T_STG
-65 ~ 150
Notes：
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance from Junction to Ambient .375” (9.5mm) lead length.
1N
5408G
1000
700
1000
Unit
V
V
V
V
A
A
μA
°C / W
pF
°C
http://www.SeCoSGmbH.com/
19-Dec-2011 Rev. B
Any changes of specification will not be informed individually.
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