2SC4226_11 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – NPN Silicon Epitaxial Planar Transistor

Elektronische Bauelemente
2SC4226
0.1A , 20V
NPN Silicon Epitaxial Planar Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
● Low noise
● High gain
● Power dissipation.(P_C=150mW)
APPLICATIONS
● High frequency low noise amplifier.
CLASSIFICATION OF h_FE
Product-Rank 2SC4226-P
Range
40~80
Marking
r23
2SC4226-Q
70~140
r24
2SC4226-R
125~250
r25
PACKAGE INFORMATION
Package
MPQ
SOT-323
3K
LeaderSize
7’ inch
SOT-323
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.80 2.20
1.80 2.45
1.15 1.35
0.80 1.10
1.20 1.40
0.20 0.40
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.25
-
-
0.650 TYP.
Collector


Base
ABSOLUTE MAXIMUM RATINGS ( T_A = 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current – Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
Ratings
20
12
3
100
150
+150, -65 ~ +150

Emitter
Unit
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS ( T_A = 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Feed Back Capacitance
Noise Figure
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
f_T
C_re
NF
Min.
20
12
3
-
-
40
3.0
-
-
Typ.
-
-
-
-
-
110
4.5
0.7
1.2
Max.
-
-
-
1
1
250
-
1.5
2.5
Unit
V
V
V
A
A
GHz
pF
dB
Testing Condition
I_C=100μA, I_E=0
I_C=1mA, I_B=0
I_E=100μA, I_C=0
V_CB=10V, I_E=0
V_EB=1V, I_C=0
V_CE=3V, I_C=7mA
V_CE=3V, I_E=7mA
V_CE=3V, I_E=0, f=1MHz
V_CE=3V, I_C=7mA, f=1GHz
24-Feb-2011 Rev. B
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