2SC4226 Datasheet, PDF (1/3 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

Elektronische Bauelemente
2SC4226
NPN Silicon
Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
The 2SC4226 is a Low supply voltage transistor
designed for VHF, UHF low noise amplifier
Suitable for a high density surface mount assembly
since the transistor has been applied
small mini mold package
PACKAGING INFORMATION
Weight: 0.0074 g
Collector
3
MARKING CODE
r23, r24, r25
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS (at T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current – Continuous
Collector Power Dissipation
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
20
12
3
0.1
150
+150, -65 ~ +150
SOT-323
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.80 2.20
1.80 2.45
1.15 1.35
0.80 1.10
1.20 1.40
0.20 0.40
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.25
-
-
0.650 TYP.
Unit
V
V
V
A
mW
℃
ELECTRICAL CHARACTERISTICS (at T_A = 25°C unless otherwise specified)
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Feed Back Capacitance
Noise Figure
Symbol
I_CBO
I_EBO
h_FE*
f_T
C_re
NF
Min.
-
-
40
3.0
-
-
Typ.
-
-
-
-
-
-
Max.
Unit
Test Conditions
1
μA
V_CB = 10 V, I_E = 0
1
μA
V_EB = 1 V, I_C = 0
250
V_CE = 3V, I_C = 7 mA
-
GHz V_CE = 3V, I_C = 7 mA
1.5
pF
V_CE = 3V, I_E = 0, f = 1 MHz
2.5
dB
V_CE = 3V, I_C = 7mA, f = 1GHz
* Pulse Test: Pulse Width ≦ 350μs, Duty Cycle ≦ 2%
CLASSIFICATION OF h_FE
Marking
Rank
Range
r23
P
40 - 80
r24
Q
70 - 140
r25
R
125 - 250
01-June-2002 Rev. A
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