2SC4215 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – NPN EPITAXIAL PLANAR TYPE (HIGH FREQUENCY FM, RF, MIX, IF AMPLIFIERAPPLICATIONS)

Elektronische Bauelemente
2SC4215
0.02A , 40V
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 Small reverse transfer capacitance：Cre = 0.55pF (typ.).
 Low noise figure：NF=2dB (typ.) (f=100 MHz)
CLASSIFICATION OF h_FE
Product-Rank 2SC4215-R
Range
40~80
Marking
QR
2SC4215-O
70~140
QO
2SC4215-Y
100~200
QY
PACKAGE INFORMATION
Package
MPQ
SOT-323
3K
LeaderSize
7’ inch
SOT-323
A
L
3
Top View
CB
1
2
K
E
3
1
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.80 2.20
1.80 2.45
1.15 1.35
0.80 1.10
1.20 1.40
0.20 0.40
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.25
-
-
0.650 TYP.
Collector

ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction & Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
Rating
40
30
4
20
100
150, -55~150

Base

Emitter
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Base Time Constant
Transition Frequency
Reverse Transfer Capacitance
Noise Figure
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
Cc.r_bb
f_T
C_re
NF
Min.
40
30
4
-
-
40
-
260
-
-
Typ.
-
-
-
-
-
-
-
550
0.55
2
Max.
-
-
-
0.1
0.5
200
25
-
-
5
Unit
V
V
V
μA
μA
ps
MHz
pF
dB
Power Gain
Gpe
17
23
-
dB
Test Condition
I_C=100μA, I_E=0
I_C=1mA, I_B=0
I_E=100μA, I_C=0
V_CB=40V, I_E=0
V_EB=4V, I_C=0
V_CE=6V, I_C=1mA
V_CE=6V, I_C=1mA, f=30MHz
V_CE=6V, I_C=1mA
V_CB=10V, f=1MHz
V_CC=6V, I_C=1mA, f=100MHz,
http://www.SeCoSGmbH.com/
10-Mar-2011 Rev. A
Any changes of specification will not be informed individually.
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