2SC4116_15 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic-Encapsulate Transistor

Elektronische Bauelemente
2SC4116
0.15A , 60V
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 High voltage and high current.
 Excellent h_FE linearity.
 High h_FE.
 Low noise.
 Complementary to 2SA1586
SOT-323
A
L
3
Top View
CB
1
2
K
E
3
1
2
CLASSIFICATION OF h_FE
Product-Rank 2SC4116-O
Range
70~140
Marking
LO
2SC4116-Y 2SC4116-GR 2SC4116-BL
120~240
200~400
350~700
LY
LG
LL
PACKAGE INFORMATION
Package
MPQ
SOT-323
3K
Leader Size
7 inch
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.80 2.20
1.80 2.45
1.15 1.35
0.80 1.10
1.20 1.40
0.20 0.40
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.25
-
-
0.650 TYP.
Collector


Base

Emitter
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction & Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
Rating
60
50
5
150
100
150, -55~150
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-off Current
DC Current Gain
Collector-Base Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
f_T
C_ob
Min.
60
50
5
-
-
70
-
80
-
Typ.
-
-
-
-
-
-
-
-
-
Max.
-
-
-
0.1
0.1
700
0.25
-
3.5
Unit
V
V
V
μA
μA
V
MHz
pF
Noise Figure
NF
-
-
10
dB
Test Condition
I_C=100μA, I_E=0
I_C=1mA, I_B=0
I_E=100μA, I_C=0
V_CB=60V, I_E=0
V_EB=5V, I_C=0
V_CE=6V, I_C=2mA
I_C=100mA, I_B=10mA
V_CE=10V, I_C=1mA
V_CB=10V, I_E=0, f=1MHz
V_CE=6V, I_C=0.1mA, f=1KHz,
Rg=10KΩ
http://www.SeCoSGmbH.com/
22-Feb-2012 Rev. B
Any changes of specification will not be informed individually.
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