2SC4115S_15 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic-Encapsulated Transistor

Elektronische Bauelemente
2SC4115S
3 A , 40 V
NPN Plastic-Encapsulated Transistor
FEATURES
High Current Capability
High DC Current Gain
Small Package
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
APPLICATIONS
Audio Amplifier Applications
AM Amplifier Applications
CLASSIFICATION OF h_FE
Product-Rank 2SC4115S-Q 2SC4115S-R
Range
120~270
180~390
2SC4115S-S
270~560
TO-92S
REF.
A
B
C
D
E
F
G
H
J
K
L
Millimeter
Min. Max.
3.90 4.10
3.05 3.25
1.42 1.62
15.1 15.5
2.97 3.27
0.66 0.86
2.44 2.64
1.27 REF.
0.36 0.48
0.36 0.51
45°
Collector
2
3
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
40
20
6
3
300
417
150, -55~150
Unit
V
V
V
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Condition
Collector to Base Breakdown Voltage
V(BR)CBO
40
-
-
V IC=0.05mA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
20
-
-
V IC=1mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
6
-
-
V IE=0.05mA, IC=0
Collector Cut – Off Current
ICBO
-
-
0.1
µA VCB=30V, IE=0
Emitter Cut – Off Current
IEBO
-
-
0.1
µA VEB=5V, IC=0
DC Current Gain
hFE
120
-
560
VCE=2V, IC=100mA
Collector to Emitter Saturation Voltage
VCE(sat)
-
-
0.5
V IC=2A, IB=100mA
Collector Output Capacitance
Cob
-
25
-
pF VCB=10V, IE=0, f=1MHz
Transition Frequency
fT
-
290
-
MHz VCE=2V, IC=0.5A, f=100MHz
http://www.SeCoSGmbH.com/
12-Dec-2013 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 1