2SC4115 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – Low Frequency Transistor

Elektronische Bauelemente
2SC4115
3A , 40V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Small Flat Package
General Purpose Application
Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A)
CLASSIFICATION OF h_FE(1)
Product-Rank 2SC4115-Q
Range
120~270
Marking
4115Q
2SC4115-R
180~390
4115R
2SC4115-S
270~560
4115S
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
Leader Size
7 inch
Collector
2
1
Base
3
Emitter
SOT-89
4
A
1
B
2
C
3
E
E
C
B
F
G
H
J
D
K
L
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.40 4.60
3.94 4.25
1.40 1.60
2.25 2.60
1.50 1.85
0.89 1.20
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.40 0.58
1.50 TYP
3.00 TYP
0.32 0.52
0.35 0.44
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector-Base Voltage
VCBO
40
Collector-Emitter Voltage
VCEO
20
Emitter-Base Voltage
VEBO
6
Collector Current-Continuous
IC
3
Collector Power Dissipation
PC
500
Junction & Storage Temperature
TJ, TSTG
150, -55~150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test conditions
Collector-Base Breakdown Voltage
V(BR)CBO
40
-
-
V IC=50µA, IE=0
Collector-Emitter Breakdown Voltage
V(BR)CEO
20
-
-
V IC=1mA, IB=0
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
V(BR)EBO
6
ICBO
-
-
IEBO
-
-
-
V IE=50µA, IC=0
-
0.1 µA VCB=30V, IE=0
-
0.1
µA VEB=5V, IC=0
DC Current Gain
hFE
120
-
560
VCE=2V, IC=100mA
Collector-Emitter Saturation voltage
VCE(sat)
-
-
0.5
V IC=2A, IB=100mA
Transition Frequency
fT
200
290
-
MHz VCE=2V,IC=500mA,f=100MHz
http://www.SeCoSGmbH.com/
20-Mar-2012 Rev. A
Any changes of specification will not be informed individually.
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