2SC4081F_15 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic-Encapsulate Transistor

Elektronische Bauelemente
2SC4081F
0.15A , 60V
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 Low Cob. Cob=2.0pF (Typ.)
 Excellent h_FE linearity
 Complementary to 2SA1576A
CLASSIFICATION OF h_FE
Product-Rank 2SC4081F-Q 2SC4081F-R 2SC4081F-S
Range
120~270
180~390
270~560
Marking
BQ
BR
BS
PACKAGE INFORMATION
Package
MPQ
SOT-323
3K
Leader Size
7’ inch
SOT-323
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.80 2.20
1.80 2.45
1.15 1.35
0.80 1.10
1.20 1.40
0.20 0.40
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.25
-
-
0.650 TYP.
Collector


Base

Emitter
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction & Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
Rating
60
50
7
150
200
150, -55~150
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
f_T
C_ob
Min.
60
50
7
-
-
120
-
-
-
Typ.
-
-
-
-
-
-
-
180
-
Max.
-
-
-
0.1
0.1
560
0.4
-
3.5
Unit
V
V
V
μA
μA
V
MHz
pF
Test Conditions
I_C=50μA, I_E=0
I_C=1mA, I_B=0
I_E=50μA, I_C=0
V_CB=60V, I_E=0
V_EB=7V, I_C=0
V_CE=6V, I_C=1mA
I_C=50mA, I_B=5mA
V_CE=12V, I_C=2mA,f=30MHz
V_CB=12V, I_E=0, f=1MHz
http://www.SeCoSGmbH.com/
19-Nov-2013 Rev. D
Any changes of specification will not be informed individually.
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