2SC4081F Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – NPN Silicon General Purpose Transistor

Elektronische Bauelemente
2SC4081F
NPN Silicon
General Purpose Transistor
RoHS Compliant Product
Feature
· Low Cob. Cob = 2.0 pF (Typ.)
· Complements the 2SA1576A
COLLECTOR
3
1
BASE
A
L
3
Top View
1
2
BS
V
G
2
3
EMITTER
C
1
Marking Code: 5BX
2
D
X = hFE Rank Code
H
K
J
SOT-323
Dim Min Max
A 1.800 2.200
B 1.150 1.350
C 0.800 1.000
D 0.300 0.400
G 1.200 1.400
H 0.000 0.100
J 0.100 0.250
K 0.350 0.500
L 0.590 0.720
S 2.000 2.400
V 0.280 0.420
All Dimension in mm
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
ć
Storage Temperature
Tstg
-55~+150
ć
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
50
V
Emitter to Base Voltage
VEBO
7
V
Collector Current
IC
150
mA
Total Power Dissipation
PD
225
mW
Characteristics at Ta = 25к
Parameter
Symbol Min Typ. Max Unit
Test Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
BVCBO
60
-
-
V IC=50uA
BVCEO
50
-
-
V IC=1mA
Emitter-Base Breakdown Voltage
BVEBO
7
-
-
V IE=50uA
Collector-Emitter Breakdown Voltage
Emitter-Base Cutoff Current
ICBO
IEBO
-
-
100
nA VCB=60V
-
-
100
nA VEB=7V
Collector Saturation Voltage 1
VCE(sat)
-
-
400 mV IC=50mA, IB=5mA
DC Current Gain
Gain-Bandwidth Product
hFE
120 -
560
-
VCE=6V, IC=1mA
fT
- 180
-
MHz VCE=-12V, IC=2mA, f=100MHz
Output Capacitance
Cob
-
2
3.5
pF VCB=-12V, f=1MHz, IE=0
Classification of hFE
Rank
Q
*Pulse Test: Pulse Width = 380us, Duty Cycle 2%
R
S
Range
120 - 270
180 - 390
270 - 560
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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