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2SC3930 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency amplification)
Elektronische Bauelemente
2SC3930
0.03A , 30V
NPN Silicon Epitaxial Planar Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
● For high-frequency Amplification Complementary
to 2SA1532
● Optimum for RF amplification of FM/AM radios
● High transition frequency fT
CLASSIFICATION OF hFE
Product-Rank 2SC3930-VB
Range
70~140
2SC3930-VC
110~220
PACKAGE INFORMATION
Package
MPQ
SOT-323
3K
LeaderSize
7’ inch
SOT-323
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.80 2.20
1.80 2.45
1.15 1.35
0.80 1.10
1.20 1.40
0.20 0.40
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.25
-
-
0.650 TYP.
Collector


Base

Emitter
ABSOLUTE MAXIMUM RATINGS ( TA = 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current – Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
Ratings
30
20
5
30
150
150, -55~150
Unit
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS ( TA = 25°C unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Common emitter reverse transfer
capacitance
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
fT
Cre
Noise Figure
NF
Reverse transfer impedance
Zrb
Min.
30
20
5
-
-
70
150
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
0.1
0.1
220
-
1.5
4
50
Unit
V
V
V
A
A
MHz
pF
dB
Ω
Testing Condition
IC=100μA, IE=0
IC=100μA, IB=0
IE=100μA, IC=0
VCB=10V, IE=0
VEB=5V, IC=0
VCE=10V, IC=1mA
VCE=10V, IE=1mA, f=200MHz
VCB=10V, IC=1mA, f=10.7MHz
VCB=10V, IC=1mA, f=5MHz
VCB=10V, IC=1mA, f=2MHz
http://www.SeCoSGmbH.com/
08-Mar-2011 Rev. A
Any changes of specification will not be informed individually.
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