2SC3838 Datasheet, PDF (1/3 Pages) Unisonic Technologies – HIGH-FREQUENCY AMPLIFIER TRANSISTOR

Elektronische Bauelemente
2SC3838
50 mA, 20 V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
z High transition frequency
z Small r_bb’·C_c and high gain
z Small NF
PACKAGE INFORMATION
Weight: 0.0078g (Approximately)
MARKING
AD
1
Base
Collector
3
2
Emitter
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
3
2
F
REF.
A
B
C
D
E
F
D
G
H
Millimeter
Min. Max.
2.80 3.00
2.25 2.55
1.20 1.40
0.90 1.15
1.80 2.00
0.30 0.50
REF.
G
H
J
K
L
J
Millimeter
Min. Max.
0.10 REF.
0.55 REF.
0.08 0.15
0.5 REF.
0.95 TYP.
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
Pc
T_J, T_STG
20
11
3
50
100
+150, -55 ~ +150
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector-Base Breakdown Voltage
V_(BR)CBO
20
-
-
V I_C=10μA, I_E=0
Collector-Emitter Breakdown Voltage
V_(BR)CEO
11
-
-
V I_C= 1mA, I_B=0
Emitter-Base Breakdown Voltage
V_(BR)EBO
3
-
-
V I_E=10μA, I_C=0
Collector Cut-Off Current
I_CBO
-
-
0.5
μA V_CB=10V, I_E=0
Emitter Cut-Off Current
I_EBO
-
-
0.5
μA V_EB= 2V, I_C=0
Collector-Emitter Saturation Voltage
V_CE(sat)
-
-
500
mV I_C=-10mA, I_B= 5mA
DC Current Gain
h_FE
56
-
180
V_CE= 10V, I_C=5mA
Transition Frequency
f_T
1.4
-
-
GHz V_CE=10V, I_C= 10mA, f = 500MHz
Output Capacitance
Cob
-
-
1.5
pF V_CB=10V, I_E=0A, f=1MHz
Collector-Base Time Constant
r_bb’·C_c
-
-
12
pS I_C=10mA,V_CB=10V, f=31.8MHz
Noise Figure
F
-
3.5
-
dB V_CE=6V, I_C= 2mA, f = 500MHz, Rs = 50Ω
CLASSIFICATION OF h_FE
Rank
Range
N
56 - 120
P
82 - 180
01-June-2005 Rev. A
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