2SC380TM Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – NPN EPITAXIAL PLANAR TYPE (HIGH FREQUENCY AMPLIFIER APPLICATIONS)

Elektronische Bauelemente
2SC380TM
0.05A , 35V
NPN Plastic-Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 High Frequency Amplifier Applications
CLASSIFICATION OF h_FE
Product-Rank 2SC380TM-R 2SC380TM-O 2SC380TM-Y
Range
40~80
70~140
120~240
Marking
R
O
Y
TO-92
G
H
J
A
D
B
K
E
CF
Emitter
Collector
Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min.
4.40
4.30
Max.
4.70
4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Collector


Base

Emitter
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_J, T_STG
35
30
4
50
300
416
150, -55~150
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
f_T
C_ob
Min.
35
30
4
-
-
40
-
-
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
0.1
0.1
240
0.4
1
-
3.2
Unit
V
V
V
μA
μA
V
V
MHz
pF
Test Condition
I_C=0.1mA, I_E=0
I_C=1mA, I_B=0
I_E=0.1mA, I_C=0
V_CB=35V, I_E=0
V_EB=4V, I_C=0
V_CE=12V, I_C=2mA
I_C=10mA, I_B=1mA
I_C=10mA, I_B=1mA
V_CE=10V, I_C=1mA
V_CB=10V, I_E=0, f=1MHz
http://www.SeCoSGmbH.com/
11-Mar-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 1