2SC3650_11 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – 1.2 A , 30 V NPN Plastic-Encapsulate Transistor

Elektronische Bauelemente
2SC3650
1.2 A , 30 V
NPN Plastic-Encapsulate Transistor
FEATURES
Small Flat Package.
Large Current Capacity.
High DC Current Gain
Low V_CE(sat)
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-89
4
123
A
E
C
APPLICATION
LF Amplifiers, Various Drivers, Muting Circuit
MARKING
CF
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
Leader Size
7 inch
B
F
G
H
J
D
K
L
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.40 4.60
3.94 4.25
1.40 1.60
2.30 2.60
1.50 1.70
0.89 1.20
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.40 0.58
1.50 TYP
3.00 TYP
0.32 0.52
0.35 0.44
Collector
2
1
Base
3
Emitter
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Continuous Collector Current
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
30
25
15
1.2
500
250
150, -55~150
Unit
V
V
V
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Collector to Base Breakdown Voltage
V(BR)CBO
30
-
-
V
Collector to Emitter Breakdown Voltage V(BR)CEO
25
-
-
V
Emitter to Base Breakdown Voltage
V(BR)EBO
15
-
-
V
Collector Cut-Off Current
ICBO
-
-
0.1
µA
Emitter Cut-Off Current
IEBO
-
-
0.1
µA
DC Current Gain
800
-
3200
hFE
600
-
-
Collector to Emitter Saturation Voltage VCE(sat)
-
Base to emitter Voltage
VBE
-
-
0.5
V
-
1.2
V
Transition Frequency
Collector Output Capacitance
fT
-
200
-
MHz
Cob
-
17
-
pF
Test condition
IC=10µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=20V, IE=0
VEB=10V, IC=0
VCE=5V, IC=500mA
VCE=5V, IC=10mA
IC=500mA, IB=10mA
IC=500mA, IB=10mA
VCE=10V, IC=50mA
VCB=10V, IE=0 , f=1MHz
http://www.SeCoSGmbH.com/
02-Nov-2011 Rev. B
Any changes of specification will not be informed individually.
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