2SC3650 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – High-hFE, Low-Frequency General-Purpose Amp Applications

Elektronische Bauelemente
RoHS Compliant Product
FEATURES
Low collector-emitter saturation voltage VCE(sat)
High DC current gain
Large current capacity
LF amp, various drivers, muting circuit
2SC3650
NPN Silicon
Epitaxial Planar Transistor
SOT-89
MAXIMUM RATINGS (T_A=25 ^oCunless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
30
25
15
1.2
500
150
-55-150
Units
V
V
V
A
mW
℃
℃
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5q TYP.
0.70 REF.
ELECTRICAL CHARACTERISTICS (Tamb=25 ^oCunless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V_(BR)CBO I_C=10 µA, I_E=0
V_(BR)CEO I_C=1mA, I_B=0
V_(BR)EBO I_E=10 µA, I_C=0
I_CBO
V_CB=20V, I_E=0
I_EBO
V_EB=10 V, I_C=0
h_FE1
V_CE=5V, I_C=500mA
h_FE2
V_CE=5V, I_C=10 A
V_CE(sat) I_C=500 A, I_B=10mA
V_BE(sat) I_C=500 A, I_B=10mA
f_T
V_CE=10 V, I_C=50mA
C_ob
V_CB=10V, I_E=0, f=1MHz
MIN TYP MAX UNIT
30
V
25
V
15
V
0.1
µA
0.1
µA
800
3200
600
0.5
V
1.2
V
220
MHz
17
pF
MARKING
CF
http://www.SeCoSGmbH.com
08-May-2007 Rev. A
Any changing of specification will not be informed individual
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