2SC3415 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic-Encapsulated Transistor

Elektronische Bauelemente
2SC3415
0.1A , 300V
NPN Plastic-Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 High Breakdown Voltage
 Low Collector Output Capacitance
 Ideal for Chroma Circuit
CLASSIFICATION OF h_FE
Product-Rank 2SC3415-M
Range
39~82
2SC3415-N
56~120
2SC3415-P
82~180
TO-92
G
H
J
A
D
B
K
E
CF
Emitter
Collector
Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Collector

ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_J, T_STG
300
300
5
0.1
0.5
250
150, -55~150

Base

Emitter
Unit
V
V
V
A
W
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter voltage
Collector output capacitance
Transition Frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
C_ob
f_T
Min.
300
300
5
-
-
39
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
3
50
Max.
-
-
-
0.5
0.5
180
2
1.2
-
-
Unit
V
V
V
μA
μA
V
V
pF
MHz
Test Condition
I_C=50μA, I_E=0
I_C=100μA, I_B=0
I_E=50μA, I_C=0
V_CB=200V, I_E=0
V_EB=4V, I_C=0
V_CE=10V, I_C=10mA
I_C=50mA, I_B=5mA
I_C=50mA, I_B=5mA
V_CB=30V, I_E=0, f=1MHz
V_CE=30V, I_C=10mA
http://www.SeCoSGmbH.com/
08-Mar-2011 Rev. A
Any changes of specification will not be informed individually.
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