2SC3356F Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Silicon Plastic Encapsulated Transistor

Elektronische Bauelemente
2SC3356F
NPN Silicon
Plastic Encapsulated Transistor
FEATURES
Low noise amplifier at VHF,
UHF and CATV band.
Low Noise and High Gain
High Power Gain
MARKING
R‡
‡ = hFE Coding
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-323
2
Emitter
Collector
3
1
Base
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.80 2.20
1.80 2.45
1.15 1.35
0.80 1.10
1.20 1.40
0.20 0.40
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.25
-
-
0.650 TYP.
ABSOLUTE MAXIMUM RATINGS
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Total Device Dissipation
Junction and Storage Temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
Ratings
20
12
3
0.1
200
150, -55~150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Parameter
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Collector Output Capacitance
Symbol
BV_CBO
BV_CEO
I_CBO
I_EBO
h_FE*
f_T
NF
Min.
20
12
-
50
-
-
Typ.
-
-
-
-
7
-
Max.
-
-
1
1
250
-
2
Unit
V
V
μA
μA
GHz
dB
Test Conditions
I_C=10μA, I_E=0
I_C= 1mA, I_B=0
V_CB=10V, I_E=0
V_EB=1V, I_C=0
V_CE=10V, I_C= 20mA
V_CE=10V, I_C= 20mA
V_CE=10V, I_C= 7mA, f = 1GHz
*pulse test: pulse width ≤ 350μs, Duty cycle ≤ 2%
CLASSIFICATION OF h_FE
Rank
Coding
Range
Marking
Q
23
50 - 100
R23
R
24
80 - 160
R24
S
25
125 – 250
R25
http://www.SeCoSGmbH.com/
01-June-2002 Rev. A
Any changes of specification will not be informed individually.
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