2SC3303_15 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – NPN Epitaxial Planar Silicon Transistor

Elektronische Bauelemente
2SC3303
5A , 100V
NPN Epitaxial Planar Silicon Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low Collector-to-Emitter Saturation Voltage
Excllent Linearity of hFE
High fT
Fast Switching Time
TO-251
CLASSIFICATION OF h_FE
Product-Rank
2SC3303-O
Range
70~140
2SC3303-Y
120~240
A
B
C
D
GE
K
H
F
Collector
2
M
J
P
1
Base
3
Emitter
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.35 6.80
4.90 5.50
2.15 2.40
0.43 0.90
6.50 7.50
7.20 9.65
REF.
G
H
J
K
M
P
Millimeter
Min. Max.
5.40 6.25
0.85 1.50
2.30
0.60 1.05
0.50 0.90
0.43 0.62
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
VCBO
100
Collector to Emitter Voltage
VCEO
80
Emitter to Base Voltage
VEBO
7
Collector Current -Continuous
IC
5
Collector Power Dissipation
PC
1
Thermal Resistance From Junction to Ambient
RθJA
125
Junction Temperature
TJ
150
Storage Temperature
TSTG
-55 ~ 150
Unit
V
V
V
A
W
°C / W
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Symbol Min. Typ. Max.
Collector-base breakdown voltage
V(BR)CBO
100
-
-
Collector-emitter breakdown voltage
V(BR)CEO
80
-
-
Emitter-base breakdown voltage
V(BR)EBO
7
-
-
Collector cut-off current
ICBO
-
-
1
Emitter cut-off current
IEBO
-
-
1
DC current gain
70
-
240
hFE
40
-
-
Collector-emitter saturation voltage
VCE(sat)
-
-
0.4
Base -emitter saturation voltage
VBE(sat)
-
-
1.2
Transition frequency
fT
-
20
-
Collector Output Capacitance
COB
-
80
-
Unit
V
V
V
µA
µA
V
V
MHz
pF
Test Conditions
IC=100µA, IE=0
IC=10mA, IB=0
IE=100µA, IC=0
VCB=100V, IE=0
VEB=7V, IC=0
VCE=1V, IC=1A
VCE=1V, IC=3A
IC=3A, IB=150mA
IC=3A, IB=150mA
VCE=4V, IC=1A
VCB=10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
20-Aug-2014 Rev. A
Any changes of specification will not be informed individually.
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