2SC3279 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

Elektronische Bauelemente
2SC3279
NPN Transistor
Plastic-Encapsulate Transistors
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
FEAT URES
High DC current gain and excellent hFE linearity
Low saturation voltage
4.55±0.2
TO-92
3 . 5 ±0. 2
(1.27 Typ.)
123
1.25⁺–0⁰.^.22
2.54±0.1
0 .4 6 ^+– 00..1¹
0 . 4 3 ^+– _{00.. 0078}
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
Parameter
Symbol
Value
Collector-Base Voltage
V_CBO
30
Collector-Emitter Voltage
V_CEO
10
Emitter-Base Voltage
V_EBO
6
Collector Current Continuous
I_C
2
Collector Power Dissipation
P_C
750
Junction, Storage Temperature
T_J, T_STG
150, -55~150
Units
V
V
V
A
mW
°C
1: Emitter
2: Collector
3: Base
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise specified)
Parameter
Symbol Test Conditions Min Typ Max Units
Collector-Base Breakdown Voltage
V_(BR)CBO
I_C = 1mA, I_E = 0
30
V
Collector-Emitter Breakdown Voltage V_(BR)CEO
I_C = 10mA, I_B = 0
10
V
Emitter-Base Breakdown Voltage
V_(BR)EBO
I_E = 1mA, I_C = 0
6
V
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
I_CBO
I_EBO
h_FE
V_CE(sat)
V_CB = 30V, I_E = 0
V_EB = 6V, I_C = 0
V_CE = 1V, I_C = 0.5A
I_C = 2A, I_B = 100mA
140
0.1
A
0.1
A
600
0.82 V
Base-Emitter Voltage
V_BE
I_C = 2A, V_CE = 1V
1.5 V
Collector Power Dissipation
C_ob
V_CB = 10V, I_E = 0, f = 1MHz
27
pF
Transition Frequency
f_T
V_CE = 1V, I_C = 0.5A
150
MHz
CLASSIFICATION OF hFE
Rank
L
Range
140-240
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
M
200-330
N
300-450
P
420-600
Any changing of specification will not be informed individual
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