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| 2SC3199_15 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic-Encapsulated Transistor | |||
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Elektronische Bauelemente
2SC3199
0.15 A , 50 V
NPN Plastic-Encapsulated Transistor
FEATURES
ï¬ High Current Capability
ï¬ High DC Current Gain
ï¬ Small Package
RoHS Compliant Product
A suffix of â-Câ specifies halogen & lead-free
APPLICATIONS
ï¬ Audio Amplifier Applications
ï¬ AM Amplifier Applications
CLASSIFICATION OF hFE
Product-Rank 2SC3199-O
Range
70~140
2SC3199-Y
120~240
2SC3199-GR
200~400
TO-92S
REF.
A
B
C
D
E
F
G
H
J
K
L
Millimeter
Min. Max.
3.90 4.10
3.05 3.25
1.42 1.62
15.1 15.5
2.97 3.27
0.66 0.86
2.44 2.64
1.27 REF.
0.36 0.48
0.36 0.51
45°
Collector
ï«ï
ï¬ï
Base
ïªï
Emitter
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
VCBO
50
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
VCEO
50
VEBO
5
IC
150
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
PC
RθJA
TJ, TSTG
400
312
150, -55~150
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Condition
Collector to Base Breakdown Voltage
V(BR)CBO
50
Collector to Emitter Breakdown Voltage V(BR)CEO
50
Emitter to Base Breakdown Voltage
V(BR)EBO
5
Collector Cut â Off Current
ICBO
-
Emitter Cut â Off Current
IEBO
-
DC Current Gain
hFE
70
Collector to Emitter Saturation Voltage
VCE(sat)
-
Collector Output Capacitance
Cob
-
Transition Frequency
fT
80
-
-
V IC=0.1mA, IE=0
-
-
V IC=1mA, IB=0
-
-
V IE=0.1mA, IC=0
-
0.1
μA VCB=50V, IE=0
-
0.1
μA VEB=5V, IC=0
-
400
VCE=6V, IC=2mA
-
0.25
V IC=100mA, IB=10mA
-
3.5
pF VCB=10V, IE=0, f=1MHz
-
-
MHz VCE=10V, IC=1mA
http://www.SeCoSGmbH.com/
22-Aug-2013 Rev. E
Any changes of specification will not be informed individually.
Page 1 of 3
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