2SC3199 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)

Elektronische Bauelemente
2SC3199
0.15 A , 50 V
NPN Plastic-Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
TO-92
 High Current Capability
 High DC Current Gain
 Small Package
G
H
J
Emitter
Collector
Base
APPLICATIONS
 Audio Amplifier Applications
 AM Amplifier Applications
A
D
B
K
CLASSIFICATION OF h_FE
E
Product-Rank 2SC3199-O 2SC3199-Y 2SC3199-GR 2SC3199-BL
Range
70~140
120~240
200~400
300~700
CF
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Collector

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_J, T_STG
50
50
5
150
400
312
150, -55~150

Base

Emitter
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Condition
Collector to Base Breakdown Voltage
V_(BR)CBO
50
Collector to Emitter Breakdown Voltage V_(BR)CEO
50
Emitter to Base Breakdown Voltage
V_(BR)EBO
5
Collector Cut – Off Current
I_CBO
-
Emitter Cut – Off Current
I_EBO
-
DC Current Gain
h_FE
70
Collector to Emitter Saturation Voltage
V_CE(sat)
-
Collector Output Capacitance
C_ob
-
Transition Frequency
f_T
80
-
-
V I_C=0.1mA, I_E=0
-
-
V I_C=1mA, I_B=0
-
-
V I_E=0.1mA, I_C=0
-
0.1
μA V_CB=50V, I_E=0
-
0.1
μA V_EB=5V, I_C=0
-
700
V_CE=6V, I_C=2mA
-
0.25
V I_C=100mA, I_B=10mA
-
3.5
pF V_CB=10V, I_E=0, f=1MHz
-
-
MHz V_CE=10V, I_C=1mA
http://www.SeCoSGmbH.com/
14-Mar-2011 Rev. A
Any changes of specification will not be informed individually.
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