2SC3052 Datasheet, PDF (1/3 Pages) Isahaya Electronics Corporation – LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

Elektronische Bauelemente
2SC3052
NPN Silicon
Plastic-Encapsulate Transistor
A suffix of "-C" specifies halogen & lead-free
3.COLLECTOR
FEATURES
1.BASE
2.EMITTER
n _{Excellent linearity of DC forward current gain}
n _{RoHS Compliant Product}
n Low collector to emitter saturation voltage
VCE(sat) = 0.3V max (@IC=100mA, IB=10mA)
D
A
L
3
Top View
1
2
BS
V
G
C
H
K
J
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
MAXIMUM RATINGS* T_A=25^oC unless otherwise noted
Symbol
Parameter
Value
Units
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
50
V
50
V
6
V
0.2
A
150
mW
125,-55~125
o_C
ELECTRICAL CH ARACTERIST ICS (Tam b = 25 ^oC unless otherwise sp ecified )
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
CLASSIFICATION OF hFE
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE(sat)
f_T
C_ob
NF
Test conditions
Ic=100 µ A, I_E=0
Ic= 100µA, I_B=0
I_E= 100µ A, I_C=0
V_CB= 50 V , I_E=0
V_EB= 6V , I_C=0
V_CE= 6V, I_C= 1mA
V_CE= 6V, I_C= 0.1mA
I_C = 100mA, I_B= 10mA
I_C = 100mA, I_B= 10mA
V_CE=6V , I_C= 10mA
V_CE=6V, I_E= 0, f = 1 MHz
V_CE=6V, I_E= -0.1mA, f = 1KHz
RG=2KΩ
MIN
50
50
6
150
50
180
TYP MAX UNIT
V
V
V
0.1
µA
0.1
µA
800
0.3
V
1
V
MHz
4
pF
15
dB
Marking
Rank
Range
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
LE
E
150-300
LF
F
250-500
LG
G
400-800
Any changing of specification will not be informed individual
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