2SC2884_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

Elektronische Bauelemente
2SC2884
0.8A, 35V
NPN Epitaxial Planar Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Small Flat Package
Complementary to 2SA1204
High DC Current Gain
CLASSIFICATION OF h_FE
Product Rank
2SC2884-O
Range
100~200
MARKING
PO1
2SC2884-Y
160~320
PY1
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
Leader Size
7’ inch
1
Base
Collector
24
3
Emitter
SOT-89
4
123
A
E
C
B
D
FG
H
K
J
L
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.40 4.60
3.94 4.25
1.40 1.60
2.30 2.60
1.50 1.70
0.89
1.2
0
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.40 0.58
1.50 TYP
3.00 TYP
0.32 0.52
0.35 0.44
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Total Power Dissipation
Thermal Resistance From Junction To
Ambient
Junction & Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
RθJA
TJ, TSTG
Ratings
35
30
5
0.8
0.5
250
150, -55~150
Unit
V
V
V
A
W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Collector-base breakdown voltage V(BR)CBO
35
-
-
V
Collector-emitter breakdown
V(BR)CEO
30
-
-
V
vEomltiattgeer-base _{breakdown voltage}
V(BR)EBO
5
-
-
V
Collector cut-off current
Emitter cut-off current
ICBO
-
-
0.1
µA
IEBO
--
-
0.1
µA
DC current gain
100
-
320
hFE
35
-
-
Collector-emitter saturation voltage VCE(sat)
-
-
0.5
V
Base-emitter saturation voltage
VBE(sat)
0.5
-
0.8
V
Transition frequency
fT
-
120
-
MHz
Output Capacitance
COB
-
13
-
pF
Test Conditions
IC=1mA, IE=0
IC=10mA, IB=0
IE=1mA, IC=0
VCB=35V, IE=0
VEB= 5V, IC=0
VCE= 1 V, IC= 0.1 A
VCE= 1 V, IC= 0.7 A
IC= 0.5 A, IB= 20mA
IC= 10mA, VCE=1V
VCE=5V, IC=10mA
VCB=10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
13-Dec-2013 Rev. A
Any changes of specification will not be informed individually.
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