2SC2878A Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – For Muting and Switching Applications

Elektronische Bauelemente
2SC2878A
0.3A, 50V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low On Resistance
High Emitter-Base Voltage
High Reverse h_FE>30(typ.) V_CE= -2V, I_C= -4mA.
TO-92
Collector
2
1 Emitter
2 Collector
3 Base
3
Base
1
Emitter
REF.
A
B
C
D
E
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70 14.5
3.30 3.81
0.36 0.56
REF.
F
G
H
J
Millimeter
Min. Max.
0.30 0.51
1.27 TYP.
1.10 1.40
2.42 2.66
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Continuous Collector Current
Collector Power Dissipation
Junction and Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
Rating
50
20
15
300
400
150, -55~150
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max.
Collector to Base Breakdown Voltage
V(BR)CBO
50
-
-
Collector to Emitter Breakdown Voltage V(BR)CEO
20
-
-
Emitter to Base Breakdown Voltage
V(BR)EBO
15
-
-
Collector Cut – Off Current
ICBO
-
-
0.1
Emitter Cut – Off Current
DC Current Gain
IEBO
-
-
0.1
hFE(1)
200
-
700
Collector to Emitter Saturation Voltage VCE(sat)
-
Base to Emitter Voltage
VBE
-
-
0.3
-
0.71
Collector Output Capacitance
Cob
-
7
-
Transition Frequency
fT
-
30
-
Turn-On Time
Storage Time
ton
-
160
-
ts
-
500
-
Fall Time
tf
-
130
-
Unit
Test Condition
V
V
V
µA
µA
V
V
pF
MHz
ns
IC=0.1mA, IE=0
IC=1mA, IB=0
IE=0.1mA, IC=0
VCB=50V, IE=0
VEB=15V, IC=0
VCE=2V, IC=4mA
IC=30mA, IB=3mA
VCE=2V, IC=4mA
VCB=10V, IE=0, f=1MHz
VCE=6V, IC=4mA
ns VCC=12V, IC=12mA, IB=1.2mA
ns
http://www.SeCoSGmbH.com/
28-Mar-2016 Rev. A
Any changes of specification will not be informed individually.
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