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| 2SC2873 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS) | |||
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Elektronische Bauelemente
FEATURES
z Low saturation voltage
z High speed switching time
z Complementary to 2SA1213
RoHS Compliant Product
2SC2873
NPN Silicon
Epitaxial Planar Transistor
SOT-89
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
50
50
5
2
500
150
-55-150
Units
V
V
V
A
mW
â
â
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5q TYP.
0.70 REF.
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Switching Time
Turn on Time
Storage Time
Fall Time
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
Symbol
Test conditions
V(BR)CBO IC=100μA, IE=0
V(BR)CEO IC=10mA, IB=0
V(BR)EBO IE=100μA , IC=0
ICBO
VCB=50V, IE=0
IEBO
VEB=5V, IC=0
hFE1 VCE=2V, IC=500mA
hFE2
VCE=2V, IC=2A
VCE(sat) IC=1A, IB=50mA
VBE(sat) IC=1A, IB=50mA
fT
VCE=2V, IC=500mA
Cob
VCB=10V, IE=0, f=1MHz
ton
tstg
VCC=30V, IC=1A, IB1=-IB2=0.05A
tf
MIN TYP MAX UNIT
50
V
50
V
5
V
0.1
μA
0.1
μA
70
240
40
0.5
V
1.2
V
120
MHz
30
pF
0.1
1.0
μs
0.1
O
70-140
MO
Y
120-240
MY
http://www.SeCoSGmbH.com
08-May-2007 Rev. A
Any changing of specification will not be informed individual
Page 1 of 3
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