2SC2715 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH FREQUENCY AMPLIFIER APPLICATIONS)

Elektronische Bauelemente
2SC2715
0.05A , 35V
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 High Power Gain
 Recommended for FM IF,OSC Stage and AM CONV.
IF Stage.
CLASSIFICATION OF h_FE
Product-Rank 2SC2715-R 2SC2715-O
Range
40~80
70~140
Marking
RR1
RO1
2SC2715-Y
120~240
RY1
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
LeaderSize
7’ inch
SOT-23
A
L
3
Top View C B
1
1
2
K
E
3
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
Collector

ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
35
30
4
50
350
150, -55~150

Base

Emitter
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Condition
Collector to Base Breakdown Voltage
V_(BR)CBO
35
-
-
V I_C=10μA, I_E=0
Collector to Emitter Breakdown Voltage V_(BR)CEO
30
-
-
V I_C=1mA, I_B=0
Emitter to Base Breakdown Voltage
V_(BR)EBO
4
-
-
V I_E=10μA, I_C=0
Collector Cut-Off Current
I_CBO
-
-
0.1
μA V_CB=35V, I_E=0
Emitter Cut-Off Current
I_EBO
-
-
0.1
μA V_EB=4V, I_C=0
DC Current Gain
h_FE
40
-
240
V_CE=12V, I_C=2mA
Collector to Emitter Saturation Voltage
V_CE(sat)
-
-
0.4
V I_C=10mA, I_B=1mA
Base to Emitter Saturation Voltage
V_BE(sat)
-
-
1
V I_C=10mA, I_B=1mA
Transition Frequency
f_T
100
-
400 MHz V_CE=10V, I_C=1mA
Power Gain
Gpe
27
-
33
dB V_CE=6V, I_C=1mA, f=10.7MHz
http://www.SeCoSGmbH.com/
14-Mar-2011 Rev. A
Any changes of specification will not be informed individually.
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