2SC2714 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH FREQUENCY, FM, RF, MIX, IF AMPLIFIER APPLICATIONS

Elektronische Bauelemente
2SC2714
0.02A , 40V
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 Small reverse Transfer Capacitance：Cre=0.7pF(typ.)
 Low Noise Figure：NF=2.5dB(typ.)(f=100MHz)
CLASSIFICATION OF h_FE
Product-Rank 2SC2714-R 2SC2714-O
Range
40~80
70~140
Marking
QR
QO
2SC2714-Y
100~200
QY
SOT-23
A
L
3
Top View C B
1
1
2
K
E
3
2
D
F
G
H
J
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
LeaderSize
7’ inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
Collector

ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
40
30
4
20
100
125, -55~125

Base

Emitter
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Condition
Collector to Base Breakdown Voltage
V_(BR)CBO
40
-
-
V I_C=10μA, I_E=0
Collector to Emitter Breakdown Voltage V_(BR)CEO
30
-
-
V I_C=1mA, I_B=0
Emitter to Base Breakdown Voltage
V_(BR)EBO
4
-
-
V I_E=10μA, I_C=0
Collector Cut-Off Current
I_CBO
-
-
0.5
μA V_CB=18V, I_E=0
Emitter Cut-Off Current
I_EBO
-
-
0.5
μA V_EB=4V, I_C=0
DC Current Gain
h_FE
40
-
200
V_CE=6V, I_C=1mA
Transition Frequency
f_T
-
550
-
MHz V_CE=6V, I_C=1mA
Reverse Transfer Capacitance
C_re
-
0.7
-
pF V_CB=6V, I_E=0, f=1MHz
Noise Figure
NF
-
2.5
5
dB V_CE=6V, I_C=1mA, f=100MHz
http://www.SeCoSGmbH.com/
14-Mar-2011 Rev. A
Any changes of specification will not be informed individually.
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