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| 2SC2712 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLFIER APPLICATIONS) | |||
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Elektronische Bauelemente
2SC2712
NPN Silicon
General Purpose Transistor
A suffix of "-C" specifies halogen & lead-free
FEATURES
*Power Dissipation
PCM:
150 mW (Tamb=25oC)
*Collector Current
ICM:
150 mA
*Collector-Base Voltage
V(BR)CBO: 60 V
*Operating and
Storage Junction Temperature Range
TJ,TSTG: -55~+150oC
*RoHS Compliant Product
1
Base
3 Collector
2
Emitter
A
L
3
Top View
1
2
V
G
BS
C
D
H
K
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
J
ELECTRICAL CHARACTERISTICS (Tamb=25oC unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
Collector-base breakdown voltage
V(BR)CBO
Ic= 100µA , IE=0
60
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA , IB=0
50
Emitter-base breakdown voltage
V(BR)EBO
IE= 100µA, IC=0
5
Collector cut-off current
ICBO
VCB= 60 V, IE=0
Emitter cut-off current
IEBO
VEB=5V, IC=0
DC current gain
hFE
VCE=6V, IC=2mA
70
Collector-emitter saturation voltage
VCE(sat)
IC= 100mA, IB=10mA
0.1
Transition frequency
fT
VCE=10V, IC= 1mA
80
Output capacitance
Noise Figure
CLASSIFICATION OF hFE
Rank
O
Cob
VCB=10V, IE=0,f=1 MHz
2.0
VCE=6V,IC=0.1mA,f=1kHz,
NF
1.0
Rg=10kâ¦
Y
GR
Range
70-140
120-240
200-400
Marking
LO
LY
LG
MAX
0.1
0.1
700
0.25
3.5
UNIT
V
V
V
µA
µA
V
MHz
pF
10
dB
BL
350-700
LL
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 1
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