2SC2688 Datasheet, PDF (1/2 Pages) NEC – NPN Silicon Transistor

Elektronische Bauelemente
2SC2688
0.2A, 300V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low frequency power amplifier
Circuits chroma output of Color TV
CLASSIFICATION OF h_FE
Product-Rank
2SC2688-L
Range
100~200
2SC2688-K
160~250
TO-126
1Emitter
2Collector
3Base
Collector
2
3
Base
1
Emitter
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
7.40 7.80
2.50 2.90
10.60 11.00
15.30 15.70
3.70 3.90
3.90 4.10
2.29 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
1.10 1.50
0.45 0.60
0.66 0.86
2.10 2.30
1.17 1.37
3.00 3.20
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
Collector Current-Continuous
VEBO
IC
Collector Power Dissipation
Junction and Storage Temperature
PC
TJ, TSTG
Rating
300
300
5
200
1.25
150, -55~150
Unit
V
V
V
mA
W
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max.
Collector to Base Breakdown Voltage
V(BR)CBO
300
-
-
Collector to Emitter Breakdown Voltage
V(BR)CEO
300
-
-
Emitter to Base Breakdown Voltage
V(BR)EBO
5
-
-
Collector Cut–Off Current
Emitter Cut–Off Current
DC Current Gain
ICBO
-
-
0.1
IEBO
-
-
0.1
hFE
100
-
250
Collector to Emitter Saturation Voltage
VCE(sat)
-
-
0.5
Transition Frequency
fT
-
50
-
Unit Test Condition
V IC=100µA, IE=0
V IC=1mA, IB=0
V IE=100µA, IC=0
µA VCB=200V, IE=0
µA VEB=5V, IC=0
VCE=10V, IC=10mA
V IC=50mA, IB=5mA
MHz VCE=30V, IC=10mA
http://www.SeCoSGmbH.com/
10-Dec-2015 Rev. B
Any changes of specification will not be informed individually.
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