2SC2668_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic-Encapsulated Transistor

Elektronische Bauelemente
2SC2668
0.02A , 40V
NPN Plastic-Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Small Reverse Transfer Capacitance.
Low Noise Figure.
CLASSIFICATION OF h_FE
Product-Rank 2SC2668-R 2SC2668-O
Range
40~80
70~140
2SC2668-Y
100~200
TO-92S
REF.
A
B
C
D
E
F
G
H
J
K
L
Millimeter
Min. Max.
3.90 4.10
3.05 3.25
1.42 1.62
15.1 15.5
2.97 3.27
0.66 0.86
2.44 2.64
1.27 REF.
0.36 0.48
0.36 0.51
45°
Collector
2
3
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
40
30
4
20
200
150, -55~150
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Condition
Collector to Base Breakdown Voltage
V(BR)CBO
40
-
-
V IC=100µA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
30
-
-
V IC=1mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
4
-
-
V IE=100µA, IC=0
Collector Cut–Off Current
ICBO
-
-
0.5
µA VCB=40V, IE=0
Emitter Cut–Off Current
IEBO
-
-
0.5
µA VEB=4V, IC=0
DC Current Gain
hFE
40
-
200
VCE=6V, IC=1mA
Reverse Transfer Capacitance
Cre
-
0.7
-
pF VCE=6V, f=1MHz
Collector-Base Time Constant
CC • rbb
-
-
30
pS VCE=6V, IE= -1mA, f=30MHz
Transition Frequency
fT
-
550
-
MHz VCE=6V, IC=1mA
Power Gain
Noise Figure
Gpe
-
18
-
dB
NF
-
-
5
dB ^{VCC=6V, IC=1mA, f=100MHz}
http://www.SeCoSGmbH.com/
09-Apr-2012 Rev. A
Any changes of specification will not be informed individually.
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