2SC2551 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (HIGHT VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS)

Elektronische Bauelemente
2SC2551
0.1 A , 300 V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 High Voltage
 Low Saturation Voltage
 Small Collector Output Capacitance
 Complementary to 2SA1091
CLASSIFICATION OF h_FE(1)
Product-Rank 2SC2551-R 2SC2551-O
Range
30~90
50~150
TO-92
G
H
J
A
D
B
K
E
CF
Emitter
Collector
Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Collector

ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
300
300
6
0.1
400
150, -55~150

Base

Emitter
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter voltage
Transition Frequency
Collector Output Capacitance
V_(BR)CBO
300
-
-
V I_C=100μA, I_E=0
V_(BR)CEO
300
-
-
V I_C=1mA, I_B=0
V_(BR)EBO
6
-
-
V I_E=100μA, I_C=0
I_CBO
-
-
0.1
μA V_CB=300V, I_E=0
I_EBO
-
-
0.1
μA V_EB=6V, I_C=0
h_FE(1)
30
-
150
h_FE(2)*
20
-
-
V_CE=10V, I_C=20mA
V_CE=10V, I_C=1mA
V_CE(sat)
-
-
0.5
V I_C=20mA, I_B=2mA
V_BE(sat)
-
-
1.2
V I_C=20mA, I_B=2mA
f_T
-
80
-
MHz V_CE=10V, I_C=20mA
C_ob
-
-
4
pF V_CB=20V, I_E=0, f=1MHz
http://www.SeCoSGmbH.com/
21-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
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