2SC2412 Datasheet, PDF (1/3 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

Elektronische Bauelemente
2SC2412
NPN Silicon
General Purpose Transistor
A suffix of "-C" specifies halogen & lead-free
FEATURES
n Low Cob.
n _Cob=2.0pF
n _{Compements the 2SA1037K}
n _{RoHS Compliant Product}
STRUCTURE
n _{Expitaxial planar type}
n _{NPN Silicon Teansistor}
A
L
3
Top View
1
2
V
G
BS
C
D
H
K
J
Collector
Base
Emitter
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
!Absolute maximum (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Limits
Unit
VCBO
60
V
VCEO
50
V
VEBO
7
V
IC
0.15
A
PC
0.2
W
Tj
150
°C
Tstg
−55~+150
°C
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO 60
Collector-emitter breakdown voltage BVCEO 50
Emitter-base breakdown voltage
BVEBO
7
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
DC current transfer ratio
hFE
120
Collector-emitter saturation voltage VCE(sat) −
Transition frequency
fT
−
Output capacitance
Cob
−
Typ.
−
−
−
−
−
−
−
180
2
Max.
−
−
−
0.1
0.1
560
0.4
−
3.5
Unit
V
V
V
µA
µA
−
V
MHz
pF
Conditions
IC=50µA
IC=1mA
IE=50µA
VCB=60V
VEB=7V
VCE=6V, IC=1mA
IC/IB=50mA/5mA
VCE=12V, IE=−2mA, f=100MHz
VCE=12V, IE=0A, f=1MHz
hFE values are classified as follows :
Item
Q
R
hFE
120~270 180~390
Ma rking
BQ
BR
S
270~560
BS
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 3