2SC2411_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

Elektronische Bauelemente
2SC2411
NPN Transistor
Plastic-Encapsulate Transistors
A suffix of "-C" specifies halogen & lead-free
FEATURES
n _{Power Dissipation}
PCM: 200 mW ( Tamb= 25^oC)
n _{RoHS Compliant Product}
1
Base
3 ^Collector
2
Emitter
A
L
K
3
Top View
BS
1
2
V
G
D
MAXIMUM RATINGS* T_A=25 unless otherwise noted
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
I_C
Emitter-Base Voltage
Collector Current -Continuous
P_C
T_J, T_stg
Collector Dissipation
Junction and Storage Temperature
J
C
H
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
Value
40
32
5
500
200
-55-150
Units
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
V_(BR)CBO Ic=100µA,I_E=0
V_(BR)CEO Ic=1mA,I_B=0
V_(BR)EBO I_E=100µA,I_C=0
I_CBO
V_CB=20V,I_E=0
I_EBO
V_EB=4V,I_C=0
h_FE
V_CE=3V,I_C=100mA
V_CE(sat) I_C=500mA,I_B=50mA
f_T
V_CE=5V,I_C=20mA,f=100MHz
C_ob
V_CB=10V,I_E=0,f=1MHz
40
V
32
V
5
V
1
µA
1
µA
82
390
0.4 V
250
MHz
6.0
pF
CLASSIFICATION OF h_FE
Rank
Range
Marking
P
82-180
CP
Q
120-270
CQ
R
180-390
CR
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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