2SC2274 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Encapsulated Transistor

Elektronische Bauelemente
2SC2274
0.5 A , 60 V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 High Breakdown Voltage
 High Current
 Low Saturation Voltage
CLASSIFICATION OF h_FE(1)
Product-Rank 2SC2274-D 2SC2274-E
Range
60~120
100~200
2SC2274-F
160~320
TO-92
G
H
J
A
D
B
K
E
CF
Emitter
Collector
Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Collector

ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_J, T_STG
60
50
5
0.5
600
208
150, -55~150

Base

Emitter
Unit
V
V
V
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter voltage
Transition Frequency
Collector Output Capacitance
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE(1)
h_FE(2)*
V_CE(sat)
V_BE(sat)
f_T
C_ob
60
-
-
V I_C=0.01mA, I_E=0
50
-
-
V I_C=1mA, I_B=0
5
-
-
V I_E=0.01mA, I_C=0
-
-
1
μA V_CB=40V, I_E=0
-
-
1
μA V_EB=4V, I_C=0
60
-
320
V_CE=5V, I_C=50mA
35
-
-
V_CE=5V, I_C=400mA
-
-
0.6
V I_C=400mA, I_B=40mA
-
-
1.2
V I_C=400mA, I_B=40mA
-
120
-
MHz V_CE=10V, I_C=10mA
-
5
-
pF V_CB=10V, f=1MHz
http://www.SeCoSGmbH.com/
21-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
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