2SC2235TM_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Encapsulated Transistor

Elektronische Bauelemente
2SC2235TM
0.8A , 120V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 Complementary to 2SA965
TO-92MOD
A
D
CLASSIFICATION OF h_FE
Product-Rank
2SC2235TM-O
Range
80-160
2SC2235TM-Y
120-240
B
K
E
F
C
Collector


Base

Emitter
N
G
H
 Emitter
 Collector
M
 Base
L
J
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.50 6.50
8.00 9.00
12.70 14.50
4.50 5.30
0.35 0.65
0.30 0.51
1.50 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
1.70 2.05
2.70 3.20
0.85 1.15
1.60 Max
0.00 0.40
4.00 Min
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
120
120
5
0.8
0.9
150, -55~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE
f_T
C_ob
Min.
120
120
5
-
-
80
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
120
-
Max.
-
-
-
0.1
0.1
240
1
1
-
30
Unit
V
V
V
μA
μA
V
V
MHz
pF
Test Conditions
I_C=1mA, I_E=0
I_C=10mA, I_B=0
I_E=1mA, I_C=0
V_CB=120V, I_E=0
V_EB=5V, I_C=0
V_CE=5V, I_C=100mA
I_C=500mA, I_B=50mA
V_CE=5V, I_C=0.5A
V_CE=5V, I_C=100mA
V_CE=10V, I_E=0, f=1MHz
http://www.SeCoSGmbH.com/
26-Sep-2012 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 2